spn6335 description applications the spn6335 is the dual n-channel enhancement mode power field effect transistors are produced using high cell density , dmos trench technology. this high density process is especially tailored to minimize on-state resistance and provide superior switching performance. these devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. z power management in note book z portable equipment z battery powered system z dc/dc converter z load switch z dsc z lcd display inverter features pin configuration( sot-363 / sc-70-6l) part marking ? n-channel 20v/0.95a,r ds(on) =380m ? @v gs =4.5v 20v/0.75a,r ds(on) =450m ? @v gs =2.5v 20v/0.65a,r ds(on) =800m ? @v gs =1.8v ? super high density cell design for extremely low rds (on) ? exceptional on-resistance and maximum dc current capability ? sot-363 (sc-70-6l) package design 3 5 y w product specification 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
pin description pin symbol description 1 s1 source 1 2 g1 gate 1 3 d2 drain 2 4 s2 source 2 5 g2 gate 2 6 d1 drain1 ordering information part number package part marking spn6335s36rg sot-363 35yw SPN6335S36RGB sot-363 35yw week code : a ~ z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) spn6335s36rg : tape reel ; pb ? free SPN6335S36RGB : tape reel ; pb ? free ; halogen ? free absoulte maximum ratings (t a =25 unless otherwise noted) parameter symbol typical unit drain-source voltage v dss 20 v gate ?source voltage v gss 12 v t a =25 1.2 continuous drain current(t j =150 ) t a =80 i d 0.9 a pulsed drain current i dm 4 a continuous source current(diode conduction) i s 0.6 a t a =25 0.35 power dissipation t a =70 p d 0.19 w operating junction temperature t j -55/150 storage temperature range t stg -55/150 spn6335 product specification 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (t a =25 unless otherwise noted) parameter symbol conditions min. typ max. unit static drain-source breakdown voltage v (br)dss v gs =0v,i d = 250ua 20 gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 0.35 1.0 v gate leakage current i gss v ds =0v,v gs =12v 100 na v ds = 20v,v gs =0v 1 zero gate voltage drain current i dss v ds = 20v,v gs =0v t j =55 5 ua on-state drain current i d(on) v ds 4.5v,v gs =5v 0.7 a v gs =4.5v,i d =0.95a 0.26 0.38 v gs =2.5v,i d =0.75a 0.32 0.45 drain-source on-resistance r ds(on) v gs =1.8v,i d =0.65a 0.42 0.80 ? forward transconductance gfs v ds =10v,i d =0.4a 1.0 s diode forward voltage v sd i s =0.15a,v gs =0v 0.8 1.2 v dynamic total gate charge q g 1.2 1.5 gate-source charge q gs 0.2 gate-drain charge q gd v ds =10v,v gs =4.5v, i d 0.6a 0.3 nc t d(on) 5 10 turn-on time t r 8 15 t d(off) 10 18 turn-off time t f v dd =10v,r l =10 ? , i d 0.5a v gen =4.5v ,r g =6 ? 1.2 2.8 ns spn6335 product specification 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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